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Index « Pays » - entrée « République de Chine (Taïwan) »
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List of bibliographic references

Number of relevant bibliographic references: 34.
Ident.Authors (with country if any)Title
00A429 (2004-06-01) Energy levels of a parabolically confined quantum dot in the presence of spin-orbit interaction
00A651 (2004-04) Electron Transition Energy for Vertically Coupled InAs/GaAs Semiconductor Quantum Dots and Rings
00A652 (2004-04) Efficient Improvement of Hot-Carrier-Induced Devices Degradation for Sub-0.1 μm Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor Technology
00A793 (2004-02-15) From localization to Landau quantization in a two-dimensional GaAs electron system containing self-assembled InAs quantum dots
00BE86 (2003-10-27) Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n-GaN layers
00C007 (2003-09-01) Photoluminescence characterization of GaInNAs/GaAs quantum well carrier dynamics
00C021 (2003-09-01) Absorption of surface acoustic waves by a two-dimensional electron gas in the presence of spin-orbit interaction
00C282 (2003-06-15) Effects of Ag and In addition on the optical properties and crystallization kinetics of eutectic Sb70Te30 phase-change recording film
00C327 (2003-06) InGaN/GaN Light-Emitting Diodes with Rapidly Thermal-Annealed Ni/ITO p-Contacts
00C411 (2003-05-01) Simulation of blue InGaN quantum-well lasers
00C779 (2003-01) Fabrication of a far-infrared photodetector based on InAs/GaAs quantum-dot superlattices
00DB83 (2002-12-30) Determination of absolute indium content in InGaN/GaN multiple quantum wells using anomalous x-ray scattering
00DD77 (2002-10-15) Energy states and magnetization in nanoscale quantum rings
00E051 (2002-07-01) Selective-area growth of indium nitride nanowires on gold-patterned Si(100) substrates
00E562 (2002-02-04) Direct determination of atomic structure in multiple quantum wells InGaN/GaN
00FB39 (2001-12-15) Electron energy state dependence on the shape and size of semiconductor quantum dots
00FB50 (2001-12-03) Tunneling current through a quantum dot array
00FE31 (2001-09-03) Crystal orientation dependence of optical gain in InGaN/GaN multiple-quantum-well structures
00FF09 (2001-08-13) Surface photovoltage spectroscopy characterization of a GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structure
010048 (2001-06-15) Time-resolved photoluminescence study of InGaAs/GaAs quantum wells on (111)B GaAs substrates under magnetic fields
010216 (2001-05) Numerical indicator field emission display using carbon nanotubes as emitters
010228 (2001-04-30) Investigation of the emission mechanism in InGaN/GaN-based light-emitting diodes
010236 (2001-04-30) High-Brightness Wafer-Bonded Indium-Tin Oxide/Light-Emitting Diode/Mirror/Si
010492 (2001-02-01) Photoreflectance studies of surface state density of InAlAs
010566 (2001-01-01) Photoreflectance study of the surface state density and distribution function of InAlAs
011E05 (2000-07-20) Electroreflectance and photoreflectance studies of surface Fermi level and surface state densities of InP SIN+ structures
012113 (2000-04-30) Wafer-Bonded AlGaInP/Au/AuBe/SiO2/Si Light-Emitting Diodes
012184 (2000-04-15) Efficient Terahertz Radiation Generation from a Bulk InAs Mirror as an Intracavity Terahertz Radiation Emitter
013A67 (1999-10-18) Energy spectrum of surface states of lattice-matched In0.52Al0.48As surface intrinsic-n+ structure
013A69 (1999-10-15) Two-photon optical-beam-induced current imaging of indium gallium nitride blue light-emitting diodes
017A57 (1997-09-01) Doping effect on normal incident InGaAs/GaAs long-wavelength quantum well infrared photodetectors
017B72 (1997-08) Annealing effects on the properties of indium tin oxide films coated on soda lime glasses with a barrier layer of TiO2-SiO2 composite films
019843 (1996-10-14) A voltage-tunable multicolor triple-coupled InGaAs/GaAs/AlGaAs quantum-well infrared photodetector for 8-12 μm detection
019C79 (1996-05-06) High optical quality of strained (111)B In0.12Ga0.88As/GaAs and In0.12Ga0.88As/Al0.2Ga0.8As multiple quantum wells

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